IRFD9014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 60V 1.1A 4DIP
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 4 V | 60 V | P-Channel | 500 mOhm | MOSFET (Metal Oxide) | 12 nC | 270 pF | Through Hole | -55 °C | 175 ░C | 10 V | 1.1 A | 4-DIP (0.300" 7.62mm) | 1.3 W |