TK210V65 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.21 Ω@10V, DFN 8 X 8, DTMOSⅥ
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Operating Temperature | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4-DFN-EP (8x8) | 210 mOhm | 4-VSFN Exposed Pad | 150 °C | 650 V | 1370 pF | 130 W | 15 A | 4 V | MOSFET (Metal Oxide) | 10 V | N-Channel | 25 nC | 30 V | Surface Mount |