NIV1161 Series
Low Capacitance ESD Protection with short−to−battery blocking for Automotive High Speed Data Lines
Manufacturer: ON Semiconductor
Catalog
Low Capacitance ESD Protection with short−to−battery blocking for Automotive High Speed Data Lines
Key Features
• Low Capacitance (0.65 pF Typical, I/O to GND)
• Diode Capacitance Matching Between I/O’s: 1% Typical
• Optimized Layout
• Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• Short-to-Battery Blocking
• NIV1161MTWTAG Wettable Flank Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
• NIV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Description
AI
The NIS/NIV1161 is designed to protect high speed data lines from ESD as well as short to vehicle battery situations. The ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines while the low RDS(on) FET limits distortion on the signal lines. The flow−through style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB and LVDS protocols.