Catalog
20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Grade | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 291 pF | AEC-Q101 | 1.8 V | 4.5 V | 20 V | SC-59 SOT-23-3 TO-236-3 | 8 V | 1 V | 6 nC | N-Channel | 150 °C | -55 °C | 940 mW | 73 mOhm | Automotive | MOSFET (Metal Oxide) | TO-236AB | 2.8 A |