MJE4353 Series

16 A, 160 V PNP Bipolar Power Transistor

Catalog

16 A, 160 V PNP Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJE4353	150 °C	-65 °C	16 A	TO-218-3	Through Hole	3.5 V	PNP	750 µA	1 MHz	SOT-93	15	160 V

Catalog

16 A, 160 V PNP Bipolar Power Transistor

Key Features

• High Collector-Emitter Sustaining Voltage -VCEO(sus)= 160 Vdc - NPN - MJE4343 PNP - MJE4353

• High DC Current Gain - @ IC= 8.0 AdchFE= 35 (Typ)

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 2.0 Vdc (Max) @ IC= 8.0 Adc

• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Description

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices