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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 30 V | MLPAK33 | 8-PowerVDFN | 4.5 V 10 V | P-Channel | Surface Mount | 150 °C | -55 °C | 1200 pF | 8 A 24.7 A | MOSFET (Metal Oxide) | 36.9 nC | 15.8 mOhm | 1.7 W 16 W | 2 V | 25 V |