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20 V, single P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Power Dissipation (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.8 A | MOSFET (Metal Oxide) | 480 mW | P-Channel | 7.7 nC | 20 V | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | 744 pF | Surface Mount | 74 mOhm | 1.8 V | 4.5 V | TO-236AB | 12 V | 900 mV |