PSMN2R0-30YLD Series

N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Catalog

N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Power Dissipation (Max)	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN2R0-30YLDX	46 nC	4.5 V 10 V	LFPAK56 Power-SO8	2 mOhm 10 V 25 A	100 A	MOSFET (Metal Oxide)	30 V	Surface Mount	2.2 V	2969 pF	20 V	142 W	N-Channel	SC-100 SOT-669	175 °C	-55 °C

Catalog

N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.