IRS21962 Series
Manufacturer: INFINEON
IC GATE DRVR HIGH-SIDE 16SOIC
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Type | Gate Type | Package / Case | Package / Case | Channel Type | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Surface Mount | -55 ░C | 125 °C | 16-SOIC | Non-Inverting | IGBT MOSFET (N-Channel) | 16-SOIC | 0.154 in 3.9 mm | Independent | High-Side | 600 V | 25 ns | 25 ns | 0.6 V 3.5 V | 2 | 500 mA | 500 mA | 20 V | 10 VDC |
INFINEON | Surface Mount | -55 °C | 150 °C | 16-SOIC | Non-Inverting | IGBT MOSFET (N-Channel) N-Channel MOSFET | 16-SOIC | 0.154 in 3.9 mm | Independent | High-Side | 600 V | 25 ns | 25 ns | 0.6 V 3.5 V | 2 | 500 mA | 500 mA | 20 V | 10 VDC |
INFINEON | Surface Mount | -55 °C | 150 °C | 16-SOIC | Non-Inverting | IGBT MOSFET (N-Channel) N-Channel MOSFET | 16-SOIC | 0.154 in 3.9 mm | Independent | High-Side | 600 V | 25 ns | 25 ns | 0.6 V 3.5 V | 2 | 500 mA | 500 mA | 20 V | 10 VDC |