SSM6K411 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 20V 10A UF6
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Type | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 W | 9.4 nC | 710 pF | MOSFET (Metal Oxide) | 2.5 V | 4.5 V | N-Channel | UF6 | Surface Mount | 10 A | 6-SMD Flat Leads | 1.2 V | 20 V | 12 mOhm | 150 °C | 12 V |