FCPF7N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
ON Semiconductor FCPF7N60T	MOSFET (Metal Oxide)	31 W	7 A	10 V	-55 °C	150 °C	5 V	Through Hole	TO-220F-3	N-Channel	600 V	30 nC	TO-220-3 Full Pack	30 V	920 pF	600 mOhm
ON Semiconductor FCPF7N60	MOSFET (Metal Oxide)	31 W	7 A	10 V	-55 °C	150 °C	5 V	Through Hole	TO-220F-3	N-Channel	600 V	30 nC	TO-220-3 Full Pack	30 V	920 pF	600 mOhm

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F

Key Features

• 650V @TJ= 150°C

• Typ. RDS(on)= 530mΩ

• Ultra low gate charge ( Typ. Qg= 23nC )

• Low effective output capacitance ( Typ. Coss.eff = 60pF )

• 100% avalanche tested

• RoHS compliant

Description

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.