BSZ110 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 11 MOHM;
| Part | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 20 V | 2.1 W 50 W | PG-TSDSON-8 | MOSFET (Metal Oxide) | 20 A | 2700 pF | 60 V | 150 °C | -55 °C | 10 V | 11 mOhm | 8-PowerVDFN | N-Channel | Surface Mount | 4 V | |
INFINEON | 20 V | 50 W | MOSFET (Metal Oxide) | 1300 pF | 80 V | 150 °C | -55 °C | 6 V 10 V | 11 mOhm | 8-PowerTDFN | N-Channel | Surface Mount | 3.8 V | 18.5 nC |