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30V, N-channel Trench MOSFET
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30V, N-channel Trench MOSFET
30V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Grade | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Technology | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Qualification | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.5 V | TO-236AB | Surface Mount | Automotive | 3.9 A | 20 V | 10 nC | 30 V | 510 mW | 3.9 W | 276 pF | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 150 °C | -55 °C | N-Channel | AEC-Q101 | 43 mOhm | 4.5 V 10 V |