PSMN1R9-40YSD Series

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Drain to Source Voltage (Vdss)	Technology
Nexperia USA Inc. PSMN1R9-40YSDX	Surface Mount	1.9 mOhm	10 V	200 A	LFPAK56 Power-SO8	175 °C	-55 °C	3.6 V	N-Channel	6198 pF	SC-100 SOT-669	20 V	80 nC	Schottky Diode (Body)	40 V	MOSFET (Metal Oxide)

Catalog

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.