High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 1.3 Ω@10V, TO-220SIS, π-MOSⅧ
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.3 Ohm | 150 °C | 9 A | 46 nC | MOSFET (Metal Oxide) | 4 V | 2000 pF | N-Channel | 50 W | 900 V | 10 V | 30 V | TO-220-3 Full Pack | Through Hole | TO-220SIS |