IRF640 Series

Manufacturer: INFINEON

Catalog

POWER MOSFET, HEXFET, N CHANNEL, 200 V, 18 A, 0.15 OHM, TO-220AB, THROUGH HOLE

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IRF640NPBF	200 V	150 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V	150 mOhm	1160 pF	4 V	175 °C	-55 °C	TO-220AB	10 V	Through Hole	18 A
INFINEON 64-0007	200 V	150 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V	150 mOhm	1160 pF	4 V	175 °C	-55 °C	TO-220AB	10 V	Through Hole	18 A
INFINEON IRF640NSTRRPBF	200 V	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	20 V	150 mOhm	1160 pF	4 V	175 °C	-55 °C	D2PAK	10 V	Surface Mount	18 A
INFINEON IRF640NLPBF	200 V	150 W	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	20 V	150 mOhm	1160 pF	4 V	175 °C	-55 °C	TO-262	10 V	Through Hole	18 A