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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 30 V | 2 V | N-Channel | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 36 mOhm | 510 mW | 5 W | 209 pF | 6.3 nC | 4.5 A | 20 V | TO-236AB | 150 °C | -55 °C | 4.5 V 10 V | ||||
Nexperia USA Inc. | Surface Mount | 60 V | 2.7 V | N-Channel | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 49 mOhm | 8.3 W 710 mW | 3.5 A | 20 V | TO-236AB | 175 °C | -55 °C | 4.5 V 10 V | 450 pF | 13 nC | AEC-Q101 | Automotive |