MC74HC1G00 Series

Single 2-Input NAND Gate

Catalog

Single 2-Input NAND Gate

Part	Number of Inputs	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Number of Circuits	Max Propagation Delay @ V, Max CL	Supplier Device Package	Package / Case	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Logic Type	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Current - Quiescent (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Supplier Device Package	Supplier Device Package	Supplier Device Package	Qualification	Grade
ON Semiconductor MC74HC1G00DBVT1G	2	2 V	6 V	Surface Mount	1	17 ns	SC-74A	SC-74A SOT-753	1.5 V	4.2 V	NAND Gate	1.8 V	0.5 V	1 çA	-55 °C	125 °C	2.6 mA	2.6 mA
ON Semiconductor MC74HC1G00DFT2GH
ON Semiconductor MC74HC1G00DFT2G	2	2 V	6 V	Surface Mount	1	17 ns		5-TSSOP SC-70-5 SOT-353	1.5 V	4.2 V	NAND Gate	1.8 V	0.5 V	1 çA	-55 °C	125 °C	2.6 mA	2.6 mA	SC-88A	SOT-353	SC-70-5
ON Semiconductor MC74HC1G00DFT2G-L22038	2	2 V	6 V	Surface Mount	1	17 ns		5-TSSOP SC-70-5 SOT-353	1.5 V	4.2 V	NAND Gate	1.8 V	0.5 V	1 çA	-55 °C	125 °C	2.6 mA	2.6 mA	SC-88A	SOT-353	SC-70-5
ON Semiconductor MC74HC1G00DFT1G-Q	2	2 V	6 V	Surface Mount	1	17 ns		5-TSSOP SC-70-5 SOT-353	1.5 V	4.2 V	NAND Gate	1.8 V	0.5 V	1 çA	-55 °C	125 °C	2.6 mA	2.6 mA	SC-88A	SOT-353	SC-70-5
ON Semiconductor MC74HC1G00DTT1	2	2 V	6 V	Surface Mount	1	17 ns	5-TSOP	SOT-23-5 Thin TSOT-23-5	1.5 V	4.2 V	NAND Gate	1.8 V	0.5 V	1 çA	-55 °C	125 °C	2.6 mA	2.6 mA
ON Semiconductor NLV74HC1G00DTT1G	2	2 V	6 V	Surface Mount	1	17 ns	5-TSOP	SOT-23-5 Thin TSOT-23-5	2 V	5.8 V	NAND Gate			1 çA	-55 °C	125 °C	2.6 mA	2.6 mA				AEC-Q100	Automotive

Catalog

Single 2-Input NAND Gate

Key Features

• High Speed: tPD= 7ns (Typ) at VCC= 5V

• Low Power Dissipation: ICC= 1mA (Max) at TA= 25°C

• High Noise Immunity

• Balanced Propagation Delays (tpLH= tpHL)

• Symmetrical Output Impedance (IOH= IOL= 2mA)

• Chip Complexity: FETs = <100

Description

The MC74HC1G00 is a high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology.The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.