Catalog
150 V, 1 A NPN high-voltage low VCEsat transistor
Description
AI
NPN high-voltage low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
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150 V, 1 A NPN high-voltage low VCEsat transistor
150 V, 1 A NPN high-voltage low VCEsat transistor
| Part | Operating Temperature | Package / Case | Mounting Type | Transistor Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | SC-59 SOT-23-3 TO-236-3 | Surface Mount | NPN | 350 mV | 1 A | 30 MHz | 150 V | TO-236AB | 100 nA | 50 |