Catalog
100 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
100 V, P-channel Trench MOSFET
100 V, P-channel Trench MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 1.2 A | MOSFET (Metal Oxide) | 15 nC | 549 pF | 4 V | 25 V | 365 mOhm | 100 V | P-Channel | 8.3 W 710 mW | 175 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | Surface Mount |