Catalog
PNP Epitaxial Silicon Transistor
Key Features
• This device is designed for general purpose medium power amplifiersand switches requiring collecor currents to 1.0A.
• Sourced from process 77.
Beta
⌘K
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) | Power - Max [Max] | Transistor Type | Mounting Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 40 | 500 mV | 45 V | 1 W | PNP | Surface Mount | 100 nA | SOT-223-4 | 1.5 A | -55 °C | 150 °C | TO-261-4 TO-261AA |
ON Semiconductor | 40 | 500 mV | 45 V | 1 W | PNP | Surface Mount | 100 nA | SOT-223-4 | 1.5 A | -55 °C | 150 °C | TO-261-4 TO-261AA |