IPD65R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 10.1A TO252-3

Part	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPD65R650CEATMA1	3.5 V	Surface Mount	650 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	86 W	440 pF	23 nC	20 V	10 V	PG-TO252-3	10.1 A	N-Channel	-40 °C	150 °C	650 V
INFINEON IPD65R250C6XTMA1		Surface Mount	250 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	208.3 W	950 pF	44 nC	20 V	10 V	PG-TO252-3	16.1 A	N-Channel	-55 °C	150 °C	650 V	3.5 V
INFINEON IPD65R600C6ATMA1	3.5 V	Surface Mount	600 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 W	440 pF	23 nC	20 V	10 V	PG-TO252-3-313	7.3 A	N-Channel	-55 °C	150 °C	650 V
INFINEON IPD65R600C6BTMA1	3.5 V	Surface Mount	600 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 W	440 pF	23 nC	20 V	10 V	PG-TO252-3	7.3 A	N-Channel	-55 °C	150 °C	650 V
INFINEON IPD65R380C6BTMA1	3.5 V	Surface Mount	380 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	83 W		39 nC	20 V	10 V	PG-TO252-3	10.6 A	N-Channel	-55 °C	150 °C	650 V		710 pF
INFINEON IPD65R420CFDBTMA1	4.5 V	Surface Mount	420 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	83.3 W	870 pF		20 V	10 V	PG-TO252-3	8.7 A	N-Channel	-55 °C	150 °C	650 V			32 nC
INFINEON IPD65R600E6BTMA1	3.5 V	Surface Mount	600 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 W	440 pF	23 nC	20 V	10 V	PG-TO252-3	7.3 A	N-Channel	-55 °C	150 °C	650 V