IRFZ34 Series

Catalog

MOSFET N-CH 60V 30A TO220AB

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Technology	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFZ34PBF	20 V	30 A	1200 pF	46 nC	50 mOhm	Through Hole	TO-220AB	MOSFET (Metal Oxide)	TO-220-3	N-Channel	-55 °C	175 ░C	10 V	4 V	88 W	60 V
Vishay General Semiconductor - Diodes Division IRFZ34PBF-BE3	20 V	30 A	1200 pF	46 nC	50 mOhm	Through Hole	TO-220AB	MOSFET (Metal Oxide)	TO-220-3	N-Channel	-55 °C	175 ░C		4 V	88 W	60 V
Vishay General Semiconductor - Diodes Division IRFZ34S	20 V	30 A	1200 pF	46 nC	50 mOhm	Surface Mount	TO-263 (D2PAK)	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	-55 °C	175 ░C	10 V	4 V		60 V	3.7 W 88 W