2ED2109 Series
Manufacturer: INFINEON
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THE 2ED2109S06F IS A 650 V 0.7 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE
| Part | Gate Type | Input Type | Package / Case | Package / Case | Package / Case | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Number of Drivers | Mounting Type | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 0.154 in | 8-SOIC | 3.9 mm | 290 mA | 700 mA | Synchronous | 35 ns | 100 ns | 1.7 V | 1.1 V | 125 °C | -40 °C | 1 | Surface Mount | Half-Bridge | 650 V | PG-DSO-8-53 | 20 V | 10 VDC |