SI4324 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 36A 8SO
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.2 mOhm | 2.5 V | 8-SOIC | 3510 pF | 4.5 V 10 V | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 36 A | N-Channel | 20 V | -55 °C | 150 °C | 30 V | MOSFET (Metal Oxide) | 85 nC | 3.5 W 7.8 W |