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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Technology | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 23 nC | 20 V | MOSFET (Metal Oxide) | SC-74 SOT-457 | 6-TSOP | 900 mV | 550 mW | 6.25 W | 5.2 A | 1.5 V 4.5 V | Surface Mount | 34 mOhm | 12 V | 1575 pF | P-Channel | 150 °C | -55 °C |