SI4162 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 19.3A 8SO
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 7.9 mOhm | -55 °C | 150 °C | 19.3 A | 20 V | 2.5 W 5 W | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 30 nC | 3 V | N-Channel | 8-SOIC | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 1155 pF |