SSM3J140TU Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -4.4 A, 0.0258 Ω@4.5V, SOT-323F(UFM)

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Mounting Type	Grade	Qualification	Technology	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J140TU,LXHF	20 V	25.8 mOhm	500 mW	4.4 A	24.8 nC	UFM	1.5 V 4.5 V	-8 V 6 V	Surface Mount	Automotive	AEC-Q101	MOSFET (Metal Oxide)	P-Channel	150 °C	1800 pF	1 V
Toshiba Semiconductor and Storage SSM3J140TU,LF	20 V	25.8 mOhm	500 mW	4.4 A	24.8 nC	UFM	1.5 V 4.5 V	-8 V 6 V	Surface Mount			MOSFET (Metal Oxide)	P-Channel	150 °C	1800 pF	1 V