IMZ120 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 26 A, 1.2 KV, 0.09 OHM, TO-247
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 117 mOhm | Through Hole | N-Channel | PG-TO247-4-1 | 5.7 V | TO-247-4 | 26 A | 707 pF | 175 °C | -55 °C | 115 W | 15 V 18 V | 1.2 kV | -7 V 23 V | 21 nC | ||
 INFINEON | 78 mOhm | Through Hole | N-Channel | PG-TO247-4-1 | 5.7 V | TO-247-4 | 36 A | 175 °C | -55 °C | 150 W | 15 V 18 V | 1.2 kV | -7 V 23 V | 31 nC | 1060 pF |