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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Supplier Device Package | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | DFN1010D-3 | MOSFET (Metal Oxide) | Surface Mount | 2.3 nC | 20 V | 150 °C | -55 °C | 5.68 W 360 mW | 1.2 V | 4.5 V | 447 mOhm | P-Channel | 1.2 A | 116 pF | 8 V | 3-XDFN Exposed Pad | 950 mV |