High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅣ
| Part | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 600 V | MOSFET (Metal Oxide) | 590 pF | 80 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V | 150 °C | 8 A | 22 nC | DPAK | N-Channel | Surface Mount | 560 mOhm | 30 V | 10 V |