SI5435 Series

Catalog

MOSFET P-CH 30V 4.3A 1206-8

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI5435BDC-T1-E3	4.3 A	4.5 V 10 V	Surface Mount	20 V	24 nC	3 V	P-Channel	1.3 W	MOSFET (Metal Oxide)	45 mOhm	-55 °C	150 °C	1206-8 ChipFET™	30 V
Vishay General Semiconductor - Diodes Division SI5435BDC-T1-GE3	4.3 A	4.5 V 10 V	Surface Mount	20 V	24 nC	3 V	P-Channel	1.3 W	MOSFET (Metal Oxide)	45 mOhm	-55 °C	150 °C	1206-8 ChipFET™	30 V