XPN12006 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 60V 20A 8TSON
| Part | FET Type | Grade | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | Automotive | 23 nC | 2.5 V | 65 W | Surface Mount | 4.5 V 10 V | AEC-Q101 | 12 mOhm | 175 °C | -55 C | 8-TSON Advance-WF | 3.1 | 3.1 | 60 V | 8-PowerVDFN | 1100 pF | 20 V | MOSFET (Metal Oxide) | 20 A |