MAX5055 Series
Manufacturer: Analog Devices Inc./Maxim Integrated
IC GATE DRVR LOW-SIDE 8SOIC
| Part | Logic Voltage - VIL, VIH | Mounting Type | Channel Type | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Number of Drivers | Input Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Gate Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | ||
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | ||
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 8-SOIC-EP | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | 0.154 in | 3.9 mm | ||
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 8-SOIC-EP | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | 0.154 in | 3.9 mm | ||
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | ||
Analog Devices Inc./Maxim Integrated | 0.8 V 2.1 V | Surface Mount | Independent | 8-SOIC | 8-SOIC-EP | Low-Side | 32 ns | 26 ns | 150 °C | -40 °C | 4 A | 4 A | 2 | Inverting | 4 V | 15 V | N-Channel MOSFET | 0.154 in | 3.9 mm |