NSS60600 Series

Low VCE(sat) Transistor, PNP, 60 V, 6.0 A

Catalog

Low VCE(sat) Transistor, PNP, 60 V, 6.0 A

Part	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type
ON Semiconductor NSS60600MZ4T1G	60 V	SOT-223 (TO-261)	-55 °C	150 °C	800 mW	100 MHz	120	350 mV	Surface Mount	TO-261-4 TO-261AA	100 nA	PNP

Catalog

Low VCE(sat) Transistor, PNP, 60 V, 6.0 A

Key Features

• Low Collector-Emitter Saturation Voltage

• High DC Current Gain

• High Current-Gain Bandwidth Product

• Superior gain linearity

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Description

The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.