CSD17527Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Part	Rds On (Max) @ Id, Vgs	Technology	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Texas Instruments CSD17527Q5A	10.8 mOhm	MOSFET (Metal Oxide)	N-Channel	Surface Mount	3 W	65 A	4.5 V 10 V	8-VSONP (5x6)	2 V	506 pF	8-PowerTDFN	20 V	-55 °C	150 °C	3.4 nC	30 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Key Features

• Ultralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.