TSM850 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 3A SOT23
| Part | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Surface Mount | 1.7 W | 9.5 nC | 20 V | SC-59 SOT-23-3 TO-236-3 | 85 mOhm | 4.5 V 10 V | N-Channel | SOT-23 | 150 °C | -55 °C | MOSFET (Metal Oxide) | 2.5 V | 3 A | 60 V | 529 pF |
Taiwan Semiconductor Corporation | Surface Mount | 9.5 nC | 20 V | SC-59 SOT-23-3 TO-236-3 | 85 mOhm | 4.5 V 10 V | N-Channel | SOT-23 | 150 °C | -55 °C | MOSFET (Metal Oxide) | 2.5 V | 2.3 A 3 A | 60 V | 529 pF |