SI9435 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 4.1A 8SO
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Technology | FET Type | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 30 V | 4.1 A | -55 °C | 150 °C | 24 nC | 4.5 V 10 V | 3 V | 8-SOIC | 1.3 W | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | P-Channel | 42 mOhm | Surface Mount |