IRFR420 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 2.4A DPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Power Dissipation (Max) | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 3.3 A | DPAK | 500 V | N-Channel | Surface Mount | 83 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 17 nC | 340 pF | 4.5 V | 3 Ohm | 30 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | TO-252AA | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 3.3 A | DPAK | 500 V | N-Channel | Surface Mount | 83 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 17 nC | 340 pF | 4.5 V | 3 Ohm | 30 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |
Vishay General Semiconductor - Diodes Division | 2.4 A | DPAK | 500 V | N-Channel | Surface Mount | 2.5 W 42 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 19 nC | 360 pF | 4 V | 3 Ohm | 20 V | 10 V |