R6007JNJ Series

600V 7A TO-263, PrestoMOS™ with integrated high-speed diode

Catalog

600V 7A TO-263, PrestoMOS™ with integrated high-speed diode

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Rohm Semiconductor R6007JNJGTL	600 V	LPTS	7 A	96 W	7 V	30 V	15 V	780 mOhm	Surface Mount	475 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	17.5 nC	MOSFET (Metal Oxide)

Catalog

600V 7A TO-263, PrestoMOS™ with integrated high-speed diode

Description

R6007JNJ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).