FDB363 Series

Catalog

MOSFET N-CH 100V 12A/80A D2PAK

Part	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology
ON Semiconductor FDB3632_SB82115	4 V	N-Channel	TO-263 (D2PAK)	12 A 80 A	6000 pF	-55 °C	175 ░C	110 nC	6 V 10 V	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	310 W	20 V	Surface Mount	9 mOhm	MOSFET (Metal Oxide)