IRFUC20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 2A TO251AA
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power Dissipation (Max) | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Through Hole | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2.5 W 42 W | 20 V | N-Channel | 4.4 Ohm | 2 A | 4 V | 10 V | IPAK TO-251-3 Short Leads TO-251AA | 600 V | 350 pF | TO-251AA | 18 nC |