SI7116 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 10.5A PPAK1212-8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | FET Type | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 40 V | 1.5 W | 2.5 V | 4.5 V 10 V | 23 nC | 7.8 mOhm | MOSFET (Metal Oxide) | 10.5 A | PowerPAK® 1212-8 | Surface Mount | N-Channel | 20 V | PowerPAK® 1212-8 |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 40 V | 1.5 W | 2.5 V | 4.5 V 10 V | 23 nC | 7.8 mOhm | MOSFET (Metal Oxide) | 10.5 A | PowerPAK® 1212-8 | Surface Mount | N-Channel | 20 V | PowerPAK® 1212-8 |