SQM110P Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 40V 120A TO263
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | P-Channel | Surface Mount | 40 V | 4 mOhm | 20 V | 4.5 V 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 375 W | MOSFET (Metal Oxide) | 120 A | 2.5 V | 330 nC | TO-263 (D2PAK) | 13980 pF |