SI4486 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 5.4A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5.4 A | N-Channel | Surface Mount | -55 °C | 175 ░C | 25 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 6 V 10 V | 8-SOIC | MOSFET (Metal Oxide) | 1.8 W | 100 V | 44 nC | 2 V |
Vishay General Semiconductor - Diodes Division | 5.4 A | N-Channel | Surface Mount | -55 °C | 175 ░C | 25 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 6 V 10 V | 8-SOIC | MOSFET (Metal Oxide) | 1.8 W | 100 V | 44 nC | 2 V |