RN2962 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Mounting Type | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Resistor - Emitter Base (R2) | Package / Case | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 50 | 100 mW | Surface Mount | 100 mA | 100 nA | ES6 | 2 PNP - Pre-Biased (Dual) | 50 V | 200 MHz | 1 kOhm | SOT-563 SOT-666 | 300 mV |
Toshiba Semiconductor and Storage | 50 | 200 mW | Surface Mount | 100 mA | 100 nA | US6 | 2 PNP - Pre-Biased (Dual) | 50 V | 200 MHz | 10 kOhms | 6-TSSOP SC-88 SOT-363 | 300 mV |