IRFR310 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 400V 1.7A DPAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 12 nC | N-Channel | -55 °C | 150 °C | DPAK | 4 V | 400 V | 20 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 W 25 W | 1.7 A | 170 pF | 3.6 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Vishay General Semiconductor - Diodes Division | 12 nC | N-Channel | -55 °C | 150 °C | DPAK | 4 V | 400 V | 20 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 W 25 W | 1.7 A | 170 pF | 3.6 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Vishay General Semiconductor - Diodes Division | 12 nC | N-Channel | -55 °C | 150 °C | DPAK | 4 V | 400 V | 20 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 W 25 W | 1.7 A | 170 pF | 3.6 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Vishay General Semiconductor - Diodes Division | 12 nC | N-Channel | -55 °C | 150 °C | TO-252AA | 4 V | 400 V | 20 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 W 25 W | 1.7 A | 170 pF | 3.6 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Vishay General Semiconductor - Diodes Division | 12 nC | N-Channel | -55 °C | 150 °C | DPAK | 4 V | 400 V | 20 V | 10 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 W 25 W | 1.7 A | 170 pF | 3.6 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |