SI4390 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 8.5A 8SO
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | 8.5 A | 15 nC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 4.5 V 10 V | Surface Mount | 1.4 W | N-Channel | 9.5 mOhm | 20 V | 2.8 V | 8-SOIC |