NSR10F40NX Series

1.0 A, 40 V, Schottky Barrier Diode, Low IR

Catalog

1.0 A, 40 V, Schottky Barrier Diode, Low IR

Part	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Speed	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type
ON Semiconductor NSR10F40NXT5G	100 çA	Schottky	490 mV	2-XDFN	200 mA 500 ns	1 A	40 V	150 °C	1.4	2-DSN	0.6	Surface Mount

Catalog

1.0 A, 40 V, Schottky Barrier Diode, Low IR

Key Features

• Very Low Forward Voltage Drop(VF)

• Very High Switching Speed

• Low Reverse Current 10 A @ 10 V VR

• ESD Rating Human Body Model: Class 3BMachine Model: Class C

Description

The Schottky diode is optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.