SIHF6 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 400V 6A TO220
| Part | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Through Hole | 30 V | 6 A | 10 V | MOSFET (Metal Oxide) | N-Channel | 311 pF | 400 V | 1 Ohm | TO-220 Full Pack | 5 V | -55 °C | 150 °C | TO-220-3 Full Pack | 18 nC | ||
Vishay General Semiconductor - Diodes Division | Through Hole | 30 V | 7 A | 10 V | MOSFET (Metal Oxide) | N-Channel | 820 pF | 650 V | TO-220 Full Pack | 4 V | -55 °C | 150 °C | TO-220-3 Full Pack | 48 nC | 600 mOhm | 31 W |